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Preliminary Datasheet
RJK5012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch ch-c Tch Tstg
Note2
Ratings 500 30 12 24 12 24 4 0.88 100 1.25 150 -55 to +150
Unit V V A A A A A mJ W C/W C C
REJ03G1487-0300 Rev.3.00 May 12, 2010
Page 1 of 6
RJK5012DPE
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 500 -- -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 0.515 1100 120 15 30 23 77 16 29 5.5 13 0.89 280 Max -- 1 0.1 4.5 0.620 -- -- -- -- -- -- -- -- -- -- 1.50 -- Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 6 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 6 A VGS = 10 V RL = 41.6 Rg = 10 VDD = 400 V VGS = 10 V ID = 12 A IF = 12 A, VGS = 0 Note4 IF = 12 A, VGS = 0 diF/dt = 100 A/s
REJ03G1487-0300 Rev.3.00 May 12, 2010
Page 2 of 6
RJK5012DPE
Preliminary
Main Characteristics
Maximum Safe Operation Area
100 20
10
Typical Output Characteristics
Ta = 25C Pulse Test 6V 7V 5.8 V 5.6 V 12 5.4 V 8 5.2 V 4
Drain Current ID (A)
10
Drain Current ID (A)
10
PW
s
=
16 10 V
0
s
1 Operation in this area is limited by RDS(on)
0.1
0.01 Tc = 25C 1 shot 0.001 0.1 1
VGS = 5 V
10
100
1000
0 0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) ()
1 VGS = 10 V Ta = 25C Pulse Test
Typical Transfer Characteristics
100 VDS = 10 V Pulse Test
Drain Current ID (A)
10
0.1
1 Tc = 75C 25C -25C 0.1 0 2 4 6 8 10
0.01 1 10 100 1000
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical)
2.0
Drain Current ID (A)
Static Drain to Source on State Resistance RDS(on) ()
Body-Drain Diode Reverse Recovery Time (Typical)
1000
1.6
1.2 ID = 12 A 0.8 6A 0.4 0 -25 3A
Reverse Recovery Time trr (ns)
VGS = 10 V Pulse Test
100
di / dt = 100 A / s VGS = 0, Ta = 25C 10 1 10 100
0
25
50
75
100 125 150
Case Temperature Tc (C)
Reverse Drain Current
IDR (A)
REJ03G1487-0300 Rev.3.00 May 12, 2010
Page 3 of 6
RJK5012DPE
Typical Capacitance vs. Drain to Source Voltage
Preliminary
Dynamic Input Characteristics (Typical)
VDS (V)
VGS = 0 f = 1 MHz
ID = 12 A Ta = 25 C 600 VDS VDD = 100 V 250 V 400 V
VGS
Capacitance C (pF)
1000
Ciss
12
Drain to Source Voltage
100 Coss
400
8
10 Ta = 25C 1 0 100
Crss
200
VDD = 400 V 250 V 100 V 8 16 24 32
4
0 40
200
300
0
Drain to Source Voltage
VDS (V)
Gate Charge
Qg (nC)
Reverse Drain Current vs. Source to Drain Voltage (Typical)
20 5
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
IDR (A)
Gate to Source Cutoff Voltage VGS(off) (V)
16
VGS = 0 Ta = 25C Pulse Test
ID = 10 mA 4 1 mA
Reverse Drain Current
12
3 0.1 mA 2
8 4
1 VDS = 10 V 0 -25 0 25
0
0.4
0.8
1.2
1.6
2.0
50
75
100 125 150
Source to Drain Voltage
VSD (V)
Case Temperature
Tc (C)
REJ03G1487-0300 Rev.3.00 May 12, 2010
Page 4 of 6
Gate to Source Voltage
VGS (V)
10000
800
16
RJK5012DPE
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Preliminary
Tc = 25C
1
D=1 0.5
0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C
PDM PW T
0.03
0.02 1 e 0.0 puls t ho 1s
100 1m 10 m Pulse Width
D=
PW T
0.01 10
100 m PW (s)
1
10
Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 250 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
REJ03G1487-0300 Rev.3.00 May 12, 2010
Page 5 of 6
RJK5012DPE
Preliminary
Package Dimensions
Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Ordering Information
Part No. RJK5012DPE-00-J3 Quantity 1000 pcs Taping Shipping Container
REJ03G1487-0300 Rev.3.00 May 12, 2010
1.7
1.3 0.15
7.8 6.6
Page 6 of 6
Notice
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